Magnetoresistive effect element, thin film magnetic head provided with this element, and manufacturing method thereof

磁気抵抗効果素子、該素子を備えた薄膜磁気ヘッド及びその製造方法

Abstract

<P>PROBLEM TO BE SOLVED: To provide an MR effect element which can suppress an electrostatic capacity between top and bottom electrode layers while obtaining a sufficient back flux effect. <P>SOLUTION: The MR effect element is provided with the lower electrode layer; an MR effect laminate which is formed on the bottom electrode layer and which has a nonmagnetic intermediate layer, a magnetic fixed layer and a magnetic free layer both of which are formed so as to sandwich the nonmagnetic intermediate layer; an insulated layer formed so as to surround the back and right/left side faces of the MR effect laminate; and the top electrode layer formed on the MR effect laminate and the insulated layer. The insulated layer has a recess filled with a part of the top electrode layer near the rear side face of the MR effect laminate. The lowest point in the concave surface of the recess is at a level equal to the top surface of the magnetic free layer or lower than the top surface. <P>COPYRIGHT: (C)2007,JPO&INPIT
【課題】十分なバックフラックス効果を享受しながら、上下部電極層間の静電容量を抑制可能であるMR効果素子を提供する。 【解決手段】下部電極層と、この下部電極層上に形成されており非磁性中間層とこの非磁性中間層を挟むように形成された磁化固定層及び磁化自由層とを有するMR効果積層体と、このMR効果積層体の後方及び左右の側面を取り囲むように形成された絶縁層と、このMR効果積層体上及びこの絶縁層上に形成された上部電極層とを備えたMR効果素子であって、この絶縁層が、MR効果積層体の後方の側面の近傍に、上部電極層の一部で満たされた窪みを有しており、この窪みの凹面内の最低点が、磁化自由層の上面と同等の高さ又はこの上面よりも下方にあるMR効果素子が提供される。 【選択図】図4

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    CN-105762275-AJuly 13, 2016唐山市盛泰建筑安装有限公司, 苗君Multiferroic/piezoelectric composite structure, storage device and preparation method thereof
    JP-2010103224-AMay 06, 2010Toshiba Corp, 株式会社東芝磁気抵抗素子、及び磁気メモリ
    US-7911744-B2March 22, 2011Tdk CorporationMagneto-resistive effect device and magnetic disk system with refilled insulation layer in contact with a read end face of a cap layer
    US-9417296-B2August 16, 2016Murata Manufacturing Co., Ltd.Magnetic sensor and manufacturing method thereof