Material gas supply apparatus

原料ガス供給装置

Abstract

【課題】より大きな面積の基板が対象であっても、装置全体の面積の増加が抑制された状態で、基板の全域に均一に原料ガスが供給できる原料ガス供給装置を提供する。 【解決手段】ガス供給配管104より供給された原料ガスは、まず、導入管131に導入される。導入管131に導入された原料ガスは、連通部135を通って導入管131側の拡散中継管132に導入される。拡散中継管132に導入された原料ガスは、連通部136を通って中央の拡散中継管132に導入され、ついで、連通部137を通ってガス吐出管133側の拡散中継管132に導入さる。これらの拡散中継管132を経由した原料ガスは、最後に、連通部138を通ってガス吐出管133に導入され、ガス吐出口134より成膜室101内の基板Wの側に吐出されて基板Wの上に供給される。 【選択図】図1
PROBLEM TO BE SOLVED: To provide a material gas supply apparatus which can uniformly supply material gas to whole regions of a substrate in a state where increase of an area of the whole apparatus is suppressed, even if the substrate with the larger area is an object. SOLUTION: Material gas supplied from gas supply piping 104 is introduced to an introduction pipe 131. Material gas introduced to the introduction pipe 131 is introduced to a diffusion relay pipe 132 of an introduction pipe 131-side through a communicating pipe 135. Material gas introduced to the diffusion relay pipe 132 is introduced to a central diffusion relay pipe 132 through a communicating part 136, and is introduced to a diffusion relay pipe 132 of a gas discharge pipe 133-side through a communicating part 137. Material gas via the diffusion relay pipe 132 is introduced to a gas discharge pipe 133 through a communicating part 138, is discharged to a side of the substrate W in a deposition room 101 from the gas discharge port 134, and is supplied onto the substrate W. COPYRIGHT: (C)2007,JPO&INPIT

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Cited By (5)

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    WO-2009116576-A1September 24, 2009三井造船株式会社Atomic layer film-forming device